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ADVANCED LINEAR DEVICES, INC.
ALD1115
COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET
GENERAL DESCRIPTION The ALD1115 is a monolithic complementary N-channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105. The ALD1115 offers high input impedance and negative current temperature coefficient. The transistor pair is designed for precision signal switching and amplifying applications in +1V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When connected in parallel with sources, drains and gates connected together, a CMOS analog switch can be constructed. In addition, the ALD1115 is intended as a building block for CMOS inverters, differential amplifier input stages, transmission gates, and multiplexer applications. The ALD1115 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the field effect transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. V+ is connected to the substrate, which is the most positive voltage potential of the ALD1115, usually SP(5). Similarly, V- is connected to the most negative voltage potential of the ALD1115, usually SN (1). FEATURES * Thermal tracking between N-channel and P-channel * Low threshold voltage of 0.7V for both N-channel and P-channel MOSFETs * Low input capacitance * High input impedance -- 1013 typical * Low input and output leakage currents * Negative current (IDS) temperature coefficient * Enhancement mode (normally off) * DC current gain 109 * Single N-channel MOSFET and single P-channel MOSFET in one package ORDERING INFORMATION ("L"suffix for lead free version)
-55C to +125C 8-Pin CERDIP Package ALD1115 DA ALD1115 MAL
* Contact factory for industrial temperature range.
APPLICATIONS * * * * * * * * * * * * * Precision current mirrors Complementary push-pull linear drives Discrete analog switches Analog signal choppers Differential amplifier input stage Voltage comparator Data converters Sample and Hold Analog current inverter Precision matched current sources CMOS inverter stage Diode clamps Source followers
PIN CONFIGURATION
SN GN DN V-
1 2 3 4
8 7 6 5
V+ DP GP SP
DA, MA, PA, SA PACKAGE
BLOCK DIAGRAM
N GATE 1 (2)
N DRAIN 1 (3)
N SOURCE 1 (1) V- (4)
Operating Temperature Range* 0C to +70C 0C to +70C 8-Pin MSOP Package 8-Pin Plastic Dip Package ALD1115 PA ALD1115PAL
P GATE 1 (6)
0C to +70C 8-Pin SOIC Package ALD1115 SA ALD1115 SAL
P DRAIN 1 (7) P SOURCE 1 (5) V+ (8)
(c) 2006 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds 13.2V 13.2V 500 mW 0C to +70C -55C to +125C -65C to +150C +260C
PA, SA package DA package
OPERATING ELECTRICAL CHARACTERISTICS TA = 25C unless otherwise specified
Parameter N - Channel Symbol Min Typ Max 0.4 0.7 1.0 Unit V Test Conditions IDS = 1A VGS = VDS P - Channel Min Typ Max -0.4 -0.7 -1.0 Unit V Test Conditions IDS = -1A VGS = VDS
Gate Threshold VT Voltage Gate Threshold Temperature TCVT Drift On Drain Current Trans-. conductance Output Conductance IDS (ON) Gfs GOS
-1.2
mV/C
-1.3
mV/C
3
4.8
mA
VGS = VDS = 5V VDS = 5V IDS= 10mA VDS = 5V IDS = 10mA VDS = 0.1V VGS = 5V IDS = 1A VGS =0V
-1.3
-2
mA
VGS = VDS = -5V VDS = -5V IDS= -10mA VDS = -5V IDS = -10mA VDS = -0.1V VGS = -5V IDS = -1A VGS =0V
1
1.8
mmho mho
0.25
0.67
mmho mho
200
40
Drain Source RDS(ON) ON Resistance Drain Source Breakdown Voltage Off Drain Current Gate Leakage Current Input Capacitance BVDSS 12
350
500
1200
1800
V
-12
V
IDS(OFF) IGSS CISS
10
400 4 30 1 3
pA nA pA nA pF
VDS =12V IGS = 0V TA = 125C VDS = 0V VGS =12V TA = 125C
10
400 4 30 1 3
pA nA pA nA pF
VDS = -12V VGS = 0V TA = 125C VDS = 0V VGS =-12V TA = 125C
0.1
1
1
1
ALD1115
Advanced Linear Devices
2
P- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
500
LOW VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (A)
VBS = 0V TA = 25C VGS = -12V -6V -4V -2V
DRAIN SOURCE CURRENT (mA)
-10 -7.5 VBS = 0V TA = 25C
VGS = -12V -10V -8V -6V
250
0
-5.0
-250
-2.5
-4V -2V
0 0 -2 -4 -6 -8 -10 -12 DRAIN SOURCE VOLTAGE (V)
-500 -320 -160 0 160 320
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE
FORWARD TRANSCONDUCTANCE (mmho)
1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 -2 -4 -6 -8 -10 -12 TA = +25C IDS = -1mA TA = +125C
-20
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
DRAIN SOURCE CURRENT (A)
VBS = 0V -15 2V 4V 6V 8V 10V 12V
VBS = 0V f = 1KHz
IDS = -5mA
-10
-5 VGS = VDS TA = 25C 0 0 -0.8 -1.6 -2.4 -3.2 -4.0
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE (K)
100 VDS = 0.4V VBS = 0V 10 TA = +125C
OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT (pA)
1000 VDS = -12V VGS = VBS = 0V 100
1 TA = +25C 0.1 0 -2 -4 -6 -8 -10 -12
10
1 -50 -25 0 +25 +50 +75 +100 +125
GATE SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (C)
ALD1115
Advanced Linear Devices
3
N- CHANNEL TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
1000
DRAIN SOURCE CURRENT (mA)
LOW VOLTAGE OUTPUT CHARACTERISTICS
DRAIN SOURCE CURRENT (A)
20
VBS = 0V TA = 25C
VGS = 12V 10V 8V
VBS = 0V TA = 25C 500
VGS = 12V 6V 4V 2V
15
0
10
6V 4V 2V
-500
5 0 0 2 4 6 8
10
12
-1000 -160
-80
0
80
160
DRAIN SOURCE VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE
20
TRANSFER CHARACTERISTIC WITH SUBSTRATE BIAS
20
FORWARD TRANSCONDUCTANCE (mmho)
10 5
IDS = 10mA TA = +25C
DRAIN SOURCE CURRENT (A)
VBS = 0V f = 1KHz
VGS = VDS TA = 25C 15 VBS = 0V 10 -2V -4V -6V -8V -10V 5 -12V
TA = +125C 2 1 0.5 0.2 0 2 4
IDS = 1mA 6 8 10 12
0 0 0.8 1.6 2.4 3.2 4.0
DRAIN SOURCE VOLTAGE (V)
GATE SOURCE VOLTAGE (V)
DRAIN SOURCE ON RESISTANCE RDS (ON) vs. GATE SOURCE VOLTAGE
DRAIN SOURCE ON RESISTANCE (K)
100
OFF DRAIN CURRENT vs. AMBIENT TEMPERATURE
OFF DRAIN SOURCE CURRENT (pA)
1000 VDS = +12V VGS = VBS = 0V 100
VDS = 0.2V VBS = 0V 10
TA = +125C 1
10
0.1 0
TA = +25C 2 4 6 8 10 12
1 -50 -25 0 +25 +50 +75 +100 +125
GATE SOURCE VOLTAGE (V)
AMBIENT TEMPERATURE (C)
ALD1115
Advanced Linear Devices
4
TYPICAL APPLICATIONS
CURRENT SOURCE MIRROR
V+ = +5V
CURRENT SOURCE WITH GATE CONTROL
V+ = +5V
V+ = +5V Q3 Q4
Q3
Q4
ISET
RSET I SOURCE
ISET Digital Logic Control of Current Source
RSET
ISOURCE
Q1
Q2
Q1, Q2: N - Channel MOSFET Q3, Q4: P - Channel MOSFET
I SOURCE = ISET = V+ -Vt RSET ~ = 4 RSET
ON
Q1
OFF : N - Channel MOSFET Q1 Q3,Q4 : P - Channel MOSFET
CMOS INVERTER
CMOS ANALOG SWITCH
V+
CONTROL
IN
OUT V+
IN
OUT
CONTROL
ALD1115
Advanced Linear Devices
5
TYPICAL APPLICATIONS
DIODE-CONNECTED CONFIGURATION
SOURCE FOLLOWER
V+
V+
V+
R
IN
VOUT = V DS
VOUT = V+ - V DS
OUT RA RB
R
CASCODE CURRENT SOURCES
V+ = +5V
V+ = +5V
ISET ISOURCE Q4
RSET Q1 Q3 Q3 Q4 Q2
Q2
Q1 ISET RSET ISOURCE
ISOURCE = ISET =
V+ - 2Vt RSET
~ =
3 RSET
Q1, Q2, Q3, Q4: N - Channel MOSFET (1/2 ALD1105 ALD1116)
Q1, Q2, Q3, Q4: P - Channel MOSFET
ALD1115
Advanced Linear Devices
6

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